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FCB20N60F 600V NCHANNEL FRFET
December 2006
SuperFET
FCB20N60F
600V NCHANNEL FRFET Feat es ur
* 650V @ TJ = 150 C * Ty Rds on) 15 p. ( =0. * Fas Recov Ty (trr = 160ns) t ery pe * Ultra low gate charge ( p.Qg=75nC) ty * Low ef f ectiv output capacitance ( p.Cos . f e ty sef =165pF) * 100% av alanche tes ted
TM
Descrpton ii
SuperFETTM is Farichild' proprietary new generation ofhigh , s , v oltage MOSFET f amily that is utiliz ing an adv anced charge balance mechanis f outs m or tanding low on- is res tance and lower gate charge perf ormance. This adv anced technology has been tailored to minimiz e conduction los ,prov s s ide uperior s witching perf ormance,and withs tand ex treme dvdt rate and higher av / alanche energy . Cons equently SuperFET is v , ery s uitable f v or arious AC/ DC power conv ion in s ers witching mode operation f s s or y tem miniaturiz ation and higher ef f iciency .
D
D
G
G
S
S
Absol e Maxi um Ratngs ut m i
Sym bol
VDSS ID IDM VGSS EAS IAR EAR dv dt / PD TJ,TSTG TL DrainSource Voltage Drain Current Drain Current GateSource v oltage Single Puls Av ed alanche Energy Av alanche Current Repetitiv Av e alanche Energy PeakDiode Recov dvdt ery / Power Dis ipation s ( C = 25 C) T -Derate abov 25 C e
( Note 2) ( Note 1 ) ( Note 1 ) ( Note 3 )
Par et am er
-Continuous( C = 25 C) T -Continuous( C = 100 C) T -Puls ed
( Note 1 )
FCB20N60F
600 20 12. 5 60 30 690 20 20. 8 50 208 1. 67 - to +150 55 300
Uni t
V A A A V mJ A mJ V/ ns W W/C C C
Operating and Storage Temperature Range Max imum Lead Temperature f Soldering Purpos or e, 1/ f 8" rom Cas f 5 Seconds e or
Ther alChar erstcs m act i i
Sym bol
R R R
JC JA* JA
Par et am er
Thermal Res tance,Junction- Cas is to- e Thermal Res tance,Junction- Ambient* is toThermal Res tance,Junction- Ambient is to-
FCB20N60F
0. 6 40 62. 5
Uni t
C/ W C/ W C/ W
* When mounted on the minimum pad s e recommended ( iz PCB Mount)
(c)2006 Fairchild Semiconductor Corporation
1
www.airchilds f emi. com
FCB20N60F Rev A2 .
FCB20N60F 600V N-CHANNEL FRFET
Package Marking and Ordering I ormation nf
Device Marking
FCB20N60F
Device
FCB20N60FTM
Package
D2-Pak
Reel Siz e
330mm
Tape W idth
24m
Quantity
800
Electrical Characteristics
Symbol
Of Characteristics f BVDSS BVDSS TJ
TC = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage
Conditions
VGS = 0V, ID = 250 A, TJ = 25 C VGS = 0V, ID = 250 A, TJ = 150 C
Min
600 --------
Typ
-650 0.6 700 -----
Max Units
----10 100 100 -100 V V V/ C V A A nA nA
/
Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
ID = 250 A, Referenced to 25 C VGS = 0V, ID = 20A VDS = 600V, VGS = 0V VDS = 480V, TC = 125 C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250 A VGS = 10V, ID = 10A VDS = 40V, ID = 10A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd
On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance 3.0 ---0.15 17 5.0 0.19 -S V
Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz VDS = 0V to 400V, VGS = 0V VDD = 300V, ID = 20A RG = 25 -----2370 1280 95 65 165 3080 1665 -85 -pF pF pF pF pF
Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480V, ID = 20A VGS = 10V
(Note 4, 5) (Note 4, 5)
--------
62 140 230 65 75 13.5 36
135 290 470 140 98 18 --
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr
NOTES: 1. Repetitive Rating:Pulse width limited by maximum j unction temperature 2. IAS = 10A, VDD = 50V, RG = 25 , Starting TJ = 25 C 3. ISD 20A, di/dt 1200A/ s, VDD BVDSS, Starting TJ = 25 C 2% 4. Pulse Test:Pulse width 300 s, Duty Cycle
Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 20A VGS = 0V, IS = 20A dIF/dt =100A/ s
(Note 4)
------
---160 1.1
20 60 1.4 ---
A A V ns C
5. Essentially Independent of Operating Temperature Typical Characteristics
FCB20N60F Rev. A2
2
www.fairchildsemi.com
FCB20N60F 600V N-CHANNEL FRFET
Typical Performance Characteristics
Figure 1.On-Region Characteristics
10
2
Figure 2.Transfer Characteristics
VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V
10
2
10
1
ID , Drain Current [ A]
ID, Drain Current [ A]
10
1
150 C
o
25 C -55 C 10
0
o
o
10
0
* Notes : 1. 250 s Pulse Test 2. TC = 25 C
o
* Note: 1. VDS = 40V 2. 250 s Pulse Test
10
-1
10
0
10
1
2
4
6
8
10
VDS, Drain-Source Voltage [ V]
VGS , Gate-Source Voltage [ V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
10
2
Figure 4.Body Diode Forward Voltage Variation vs. Source Current and Temperatue
IDR , Reverse Drain Current [ A]
0.4
Drain-Source On-Resistance
0.3
RDS(ON) [ ] ,
VGS = 10V
10
1
0.2
VGS = 20V
0.1
10
0
150 C
o
25 C
* Notes : 1. VGS = 0V 2. 250 s Pulse Test
o
* Note : TJ = 25 C
o
0.0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [ A]
VSD , Source-Drain Voltage [ V]
Figure 5.Capacitance Characteristics
10000
Ciss = Cgs + Cgd (Cds = shorted)
Figure 6.Gate Charge Characteristics
12
9000 8000
Coss = Cds + Cgd
VDS = 100V
VGS, Gate-Source Voltage [ V]
Crss = Cgd
10
VDS = 250V VDS = 400V
Capacitance [ pF]
7000 6000 5000 4000
* Notes : 1. VGS = 0 V
8
Coss
6
Ciss
3000 2000 1000 0 -1 10
2. f = 1 MHz
4
2
* Note : ID = 20A
Crss
10
0
10
1
0 0 10 20 30 40 50 60 70 80
VDS, Drain-Source Voltage [ V]
QG, Total Gate Charge [ nC]
FCB20N60F Rev. A2
3
www.fairchildsemi.com
FCB20N60F 600V N-CHANNEL FRFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
Drain-Source On-Resistance
2.5
1.1
RDS(ON), (Normalized)
2.0
1.0
1.5
1.0
* Notes : 1. VGS = 10 V 2. ID = 20 A
0.9
* Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9-1. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
25
10
2
Operation in This Area is Limited by R DS(on)
20
ID, Drain Current [A]
10
1
1 ms 10 ms DC
ID, Drain Current [A]
3
100 s
15
10
0
10
10
-1
* Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
5
10
-2
10
0
10
1
10
2
10
0 25
50
75
100
o
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [ C]
Figure 11. Transient Thermal Response Curve
10
0
D = 0 .5
Z JC(t), Thermal Response
0 .2
10
-1
* N o te s : 1. Z
JC
0 .1 0 .0 5 0 .0 2
(t) = 0 .6 C /W M a x. (t)
o
2 . D u ty F a c to r, D = t 1 /t 2 3 . T JM - T C = P DM * Z
JC
PDM t1 t2
10
-2
0 .0 1
s in g le p u ls e
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
FCB20N60F Rev. A2
4
www.fairchildsemi.com
FCB20N60F 600V N-CHANNEL FRFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCB20N60F Rev. A2
5
www.fairchildsemi.com
FCB20N60F 600V N-CHANNEL FRFET
Peak Diode Recovery dv/ Test Circuit & Waveforms dt
FCB20N60F Rev. A2
6
www.fairchildsemi.com
FCB20N60F 600V N-CHANNEL FRFET
Mechanical Dimensions
D2PAK
(0.4 0) 9 .9 0
0.2 0
4 .5 0
0.2 0
1.3 0 - 0.05
+ 0.10
0.2 0
1.2 0
0.2 0
0.2 0
9 .2 0
0.3 0
0.10
0.10
0.15 0.3 0
15 .3 0
1.4 0
2 .00
4 .9 0
0.2 0
(0.7 5 )
1.2 7
0.10
0.8 0
0.10
0
~3
+ 0.10
2 .5 4 T Y P
2 .5 4 T Y P 10.00 0.2 0 (8 .00) (4 .4 0)
0.5 0 - 0.05
10.00
0.2 0
(1.7 5 )
(7 .2 0) 0.8 0 4 .9 0
0.10 0.2 0
0.3 0
(2 X R 0.4 5 )
15 .3 0
Dimensions in Millimeters
FCB20N60F Rev. A2
7
9 .2 0
www.fairchildsemi.com
0.2 0
2 .5 4
2 .4 0
0.2 0
FAI RCHI SEMI LD CONDUCTOR TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an ex haustiv list of all such trademarks. e ACEx TM Activ eArray TM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROW IRETM MSXTM MSXProTM Across the board.Around the world. TM The Power Franchise(R) Programmable Activ DroopTM e OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSav erTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SW ITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM3 SuperSOTTM6 SuperSOTTM8 Sy ncFETTM TCMTM Tiny BoostTM Tiny BuckTM Tiny MTM PW Tiny PowerTM Tiny Logic(R) TINYOPTOTM TruTranslationTM UHC(R) UniFETTM VCXTM W ireTM
DI SCLAI MER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES W ITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, DESIGN. OR FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS,NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD' S W ORLDW IDE TERMS AND CONDITIONS,SPECIFICALLY THE W ARRANTY THEREIN,W HICH COVERS THESE PRODUCTS.
LI SUPPORT POLI FE CY
FAIRCHILD' PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR S SYSTEMS W ITHOUT THE EXPRESS W RITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1.Life support dev ices or sy stems are dev ices or sy stems which, ( are intended for surgical implant into the body or ( support or a) , b) sustain life,or ( whose failure to perform when properly used in c) accordance with instructions for use prov ided in the labeling, can be reasonably ex pected to result in significant inj to the user. ury 2. critical component is anycomponent of a life support dev or A ice sy stem whose failure to perform can be reasonably ex pected to cause the failure of the life support dev or sy ice stem, to affect its or safety or effectiv eness.
PRODUCT STATUS DEFI TI NI ONS Definition of Terms
Datasheet I dentification Adv ance Information Pr o duct St at us Formativ or In Design e Definition This datasheet contains the design specifications for product dev elopment.Specifications may change in any manner without notice. This datasheet contains preliminary data,and supplementary data will be published at a later date. Fairchild Semiconductor reserv the right to make es changes at any time without notice to improv e design. This datasheet contains final specifications.Fairchild Semiconductor reserv the right to make changes at es any time without notice to improv design. e This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only .
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I22

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